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Industrial TOPCon silicon cell sets new efficiency benchmark


by Riko Seibo

Tokyo, Japan (SPX) Mar 09, 2026

Crystalline silicon photo voltaic cells dominate the worldwide photovoltaic business, and tunnel oxide passivating contact (TOPCon) architectures are quickly gaining market share as a result of they provide sturdy efficiency whereas remaining appropriate with present manufacturing traces. Industrial TOPCon cells, nevertheless, have struggled to strategy their theoretical conversion limits, with suboptimal electrical efficiency making a persistent hole between mass manufacturing efficiencies and what the expertise ought to obtain in precept.



A analysis group led by Prof. YE Jichun on the Ningbo Institute of Supplies Know-how and Engineering (NIMTE) of the Chinese language Academy of Sciences has now reported a significant advance that pushes industrial TOPCon efficiency to a brand new stage. Working with collaborators from Zhejiang Jinko Photo voltaic Co., Ltd., Soochow College, and China Jiliang College, the group demonstrated an industrial-scale TOPCon photo voltaic cell with a licensed energy conversion effectivity of 26.66 %. The outcomes, obtained on an M10 crystalline silicon wafer with an efficient space of 313.3 sq. centimeters, had been printed in Nature Vitality on February 24.



The core of the advance is a dual-side electrical refinement technique designed particularly for large-area TOPCon units. On the entrance aspect of the cell, the researchers mixed excessive sheet resistance boron emitters of about 430 ohms per sq. with an optimized grid design. This mix improves floor passivation and lowers provider transport losses, serving to the machine retain extra of the photogenerated cost carriers as usable present.



On the rear aspect, the group launched a double-layer tunnel oxide and polysilicon construction meant to restrict efficiency degradation brought on by metallization processes. The construction consists of a extremely crystalline inside polysilicon layer that maintains sturdy digital contact with the silicon wafer and an outer barrier layer that blocks silver atoms from diffusing out of the metallic electrodes into the silicon substrate. By stopping this silver diffusion, the design sustains wonderful interfacial passivation and preserves the voltage traits of the cell throughout and after metallization.



The researchers additionally strategically thinned the rear polysilicon layer to boost the bifaciality of the machine to 88.3 %, permitting the cell to generate extra power when illuminated from either side. Taken collectively, these engineering steps yielded an open-circuit voltage of 744.6 millivolts and a fill issue of 85.57 % for the commercial TOPCon machine. In accordance with Prof. YE, the ensuing cell has reached 83.8 % of the theoretical effectivity restrict for this expertise and surpasses the efficiency of typical TOPCon photo voltaic cells.



Analysis Report:Industrial tunnel oxide passivating contact solar cells with 26.66 percent efficiency


Associated Hyperlinks

Ningbo Institute of Materials Technology and Engineering (NIMTE)

All About Solar Energy at SolarDaily.com

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